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Aluminum ion implantation depth analysis

Aluminum ion implantation depth analysis

We were able to lower the detection limit to 1E16 n/cm3. Introduction of analysis results by SIMS.

Impurity analysis is important in semiconductor material development, and secondary ion mass spectrometry (SIMS), which allows for high-sensitivity analysis, is suitable for this purpose. We present the results of analyzing a sample where aluminum was ion-implanted into silicon using SIMS (ULVAC: ADEPT-1010). Since the mass number of aluminum is adjacent to that of silicon, measurement with a Q pole-type SIMS is challenging. However, by optimizing the measurement conditions, we were able to lower the detection limit to 1E16n/cm3. [Implantation Conditions] ■ Energy: 180 keV ■ Dose: 1E15n/cm2 (The dose value used is obtained from our RBS.) *For more details, please refer to the PDF document or feel free to contact us.

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Depth analysis of oxygen leaks

Depth analysis of oxygen leaks

Introducing the analysis results of a sample where boron was ion-implanted into silicon using SIMS.

Impurity analysis is important in material development, and secondary ion mass spectrometry (SIMS), which can perform high-sensitivity analysis, is suitable for this purpose. Here, we present the results of analyzing a sample in which boron was ion-implanted into silicon at an energy of 3 keV using SIMS (ULVAC: ADEPT-1010). It is particularly evident that the depth profile of boron can be accurately analyzed due to oxygen leakage. *For more details, please refer to the PDF document or feel free to contact us.*

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Analysis of Arsenic Ion Implantation Depth

Analysis of Arsenic Ion Implantation Depth

Introducing the analysis results of ion implantation of arsenic into silicon using SIMS.

This page presents the results of analyzing samples where arsenic was ion-implanted into silicon using SIMS (ULVAC: ADEPT-1010). Arsenic (75As) interferes with the matrix silicon and residual gases such as oxygen or hydrogen, forming complex molecules (e.g., 29Si30Si16O), which requires a mass resolution of 3190. In Q-pole type SIMS, the mass resolution is only around 200, making mass separation difficult. However, by measuring the complex molecular ions of silicon and arsenic, we were able to lower the detection limit to 2×10^15 [atoms/cm3]. [Implantation Conditions] ■ Energy: 700 [keV] ■ Dose: 1×10^15 [atoms/cm2] *For more details, please refer to the PDF document or feel free to contact us.

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Analysis of Al ion implantation depth into SiC substrates

Analysis of Al ion implantation depth into SiC substrates

Introducing the results of the analysis of samples where aluminum was injected into a SiC substrate using a BOX method.

This report presents the results of analyzing a sample in which aluminum was injected into a SiC substrate using SIMS (ULVAC: ADEPT-1010). Due to the high insulating properties of the SiC substrate, accurate measurements cannot be made when the primary ion beam is irradiated onto the sample surface because charge accumulates. Therefore, by simultaneously irradiating a low-energy electron beam onto the area where the primary ion beam is applied, charge accumulation is suppressed, allowing for accurate measurements. Since the mass number of aluminum (27) is adjacent to that of silicon (28), which is the matrix, we were able to lower the detection limit to 6×10^15 [atoms/cm3] by optimizing the measurement conditions. *For more details, please refer to the PDF document or feel free to contact us.*

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